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Si4943CDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a, e
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
- 20
0.0192 at V GS = - 10 V
0.0330 at V GS = - 4.5 V
-8
-8
20
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switching
SO-8
- Computer
- Game Systems
S 1
S 2
S 1
G 1
1
2
8
7
D 1
D 1
? Battery Switching
- 2-Cell Li-Ion
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4943CDY-T1-E3 (Lead (P b )-free)
Si4943CDY -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise note d
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 20
- 8 e
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
- 8 e
- 8 b, c, e
- 6.7 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
- 30
A
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
- 2.5
- 1.7 b, c
- 30
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
- 11
6
mJ
T C = 25 °C
3.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2
2 b, c
W
T A = 70 °C
1.28 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 50 to 150
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
50
30
62.5
40
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
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